Ceramic heat sink material for pressure contact structure and semiconductor module using the same

摘要

A ceramic heat sink material for a pressure contact structure includes a resin layer on a ceramic substrate. The resin layer can have a durometer (Shore) hardness (A-type) of 70 or less, and an average value of gaps existing in an interface between the ceramic substrate and the resin layer is 3 μm or less. The resin layer can be formed by solidifying a thermosetting resin which is fluidized at a temperature of 60° C.

主权项

1. A ceramic heat sink material for a pressure contact structure configured by providing a resin layer on a ceramic substrate, which is any one of a silicon nitride substrate, an aluminum oxide substrate, and an aluminum nitride substrate and has a surface roughness Ra in a range of 0.1 to 5 μm and a three-point bending strength of 300 MPa or more, wherein the resin layer has durometer (Shore) hardness (A-type) of 70 or less, and an average value of gaps existing in an interface between the ceramic substrate and the resin layer is 3 μm or less.