Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation

摘要

A method for forming a transistor includes providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions. The method includes growing raised source/drain regions on the source/drain regions, the grown raised source/drain regions including III-V semiconductor material, and growing metal contacts on the grown raised source/drain regions. Another method for forming a transistor includes providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions. The method includes growing metal contacts on the source/drain regions. Transistors and computer program products are also disclosed.

主权项

1. A method for forming a transistor, comprising:
providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate comprising source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions; and growing metal contacts on the source/drain regions; wherein growing metal contacts further comprises providing a carrier gas carrying a precursor in a reactor at a predetermined pressure while the III-V substrate has a predetermined temperature; and wherein the precursor comprises dimethyl-ethyl amine alane (DMEAA) and the predetermined temperature is between 150 Centigrade (C) −360 C.