Methods of forming non-continuous conductive layers for conductive structures on an integrated circuit product

摘要

One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a non-continuous layer comprised of a plurality of spaced-apart conductive structures on the layer of insulating material in the trench/via, wherein portions of the layer of insulating material not covered by the plurality of spaced-apart conductive structures remain exposed, forming at least one barrier layer on the non-continuous layer, wherein the barrier layer contacts the spaced-apart conductive structures and the exposed portions of the layer of insulating material, forming at least one liner layer above the barrier layer, and forming a conductive structure in the trench/via above the liner layer.

主权项

1. A method, comprising:
forming a trench/via in a layer of insulating material, inside surfaces of said trench/via exposing said layer of insulating material; performing one of a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, and an atomic layer deposition (ALD) process to form a non-continuous layer comprised of a plurality of spaced-apart conductive structures on said layer of insulating material in said trench/via, wherein portions of said layer of insulating material exposed by said inside surfaces of said trench/via are not covered by said plurality of spaced-apart conductive structures and remain exposed after forming said non-continuous layer; performing at least one of a CVD, PVD and ALD process to form at least one barrier layer on said non-continuous layer, said at least one barrier layer contacting said spaced-apart conductive structures and said remaining exposed portions of said layer of insulating material inside of said trench/via; forming at least one liner layer above said at least one barrier layer; and forming a conductive structure in at least said trench/via above said at least one liner layer.