| 发明名称 | Structure of very high insertion loss of the substrate noise decoupling | ||
| 摘要 | A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region. | ||
| 申请公布号 | US9059183(B2) | 申请公布日期 | 2015.06.16 |
| 申请号 | US201313748662 | 申请日期 | 2013.01.24 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Ding Hanyi;Feng Kai D.;He Zhong-Xiang;Liu Xuefeng |
| 分类号 | H01L23/552;H01L21/76;H01L21/762;H01L23/58 | 主分类号 | H01L23/552 |
| 代理机构 | Roberts Mlotkowski Safran & Cole, P.C. | 代理人 | Canale Anthony;Roberts Mlotkowski Safran & Cole, P.C. |
| 主权项 | 1. A structure comprising: a substrate comprising a region having a circuit or device which is sensitive to electrical noise and electronic noise; a low impedance isolation structure extending through an entire thickness of the substrate and surrounding the region; and a high impedance isolation structure extending through the entire thickness of the substrate and surrounding the region, wherein the low impedance isolation structure and the high impedance isolation structure are formed as one of a continuous ring structure, a segmented ring structure having offset portions, and a combination thereof. | ||
| 地址 | Armonk NY US | ||