Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure

摘要

A heterojunction bipolar transistor (HBT) structure, method of manufacturing the same and design structure thereof are provided. The HBT structure includes a semiconductor substrate having a sub-collector region therein. The HBT structure further includes a collector region overlying a portion of the sub-collector region. The HBT structure further includes an intrinsic base layer overlying at least a portion of the collector region. The HBT structure further includes an extrinsic base layer adjacent to and electrically connected to the intrinsic base layer. The HBT structure further includes an isolation region extending vertically between the extrinsic base layer and the sub-collector region. The HBT structure further includes an emitter overlying a portion of the intrinsic base layer. The HBT structure further includes a collector contact electrically connected to the sub-collector region. The collector contact advantageously extends through at least a portion of the extrinsic base layer.

主权项

1. A heterojunction bipolar transistor structure comprising:
a semiconductor substrate having a sub-collector region of a first conductivity type therein; a collector region of a first conductivity type overlying a first portion of the sub-collector region, the collector region having a lower impurity concentration than the sub-collector region; an intrinsic base layer of a second conductivity type overlying at least a portion of the collector region; an extrinsic base layer adjacent to and electrically connected to the intrinsic base layer; an isolation region extending vertically between the extrinsic base layer and a second portion of the sub-collector region, a collector contact extending through a portion of the isolation region, wherein the collector contact penetrates through the extrinsic base layer; an emitter of the first conductivity type overlying a portion of the intrinsic base layer; and the collector contact electrically connected to the sub-collector region, the collector contact extending through at least a portion of the extrinsic base layer.