发明名称 |
Gate drivers for circuits based on semiconductor devices |
摘要 |
An electronic component includes a switching device comprising a source, a gate, and a drain, the switching device having a predetermined device switching rate. The electronic component further includes a gate driver electrically connected to the gate and coupled between the source and the gate of the switching device, the gate driver configured to switch a gate voltage of the switching device at a gate driver switching rate. The gate driver is configured such that in operation, an output current of the gate driver cannot exceed a first current level, wherein the first current level is sufficiently small to provide a switching rate of the switching device in operation to be less than the predetermined device switching rate. |
申请公布号 |
US9059076(B2) |
申请公布日期 |
2015.06.16 |
申请号 |
US201414222992 |
申请日期 |
2014.03.24 |
申请人 |
Transphorm Inc. |
发明人 |
Wu Yifeng;Zhou Liang;Wang Zhan |
分类号 |
H03K3/00;H01L29/20;H03K17/16;H01L29/40;H01L29/778;H03K17/687;H01L29/423 |
主分类号 |
H03K3/00 |
代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
主权项 |
1. An electronic component, comprising:
a switching device comprising a source, a gate, and a drain, the switching device having a predetermined device switching rate; a gate driver electrically coupled between the source and the gate of the switching device; and a ferrite bead connected between the output of the gate driver and the gate of the switching device, the gate driver configured to switch a gate voltage of the switching device at a gate driver switching rate, the gate driver configured such that in operation, an output current of the gate driver cannot exceed a first current level; wherein the first current level is sufficiently small to provide a switching rate of the switching device in operation to be less than the predetermined device switching rate. |
地址 |
Goleta CA US |