发明名称 Gate drivers for circuits based on semiconductor devices
摘要 An electronic component includes a switching device comprising a source, a gate, and a drain, the switching device having a predetermined device switching rate. The electronic component further includes a gate driver electrically connected to the gate and coupled between the source and the gate of the switching device, the gate driver configured to switch a gate voltage of the switching device at a gate driver switching rate. The gate driver is configured such that in operation, an output current of the gate driver cannot exceed a first current level, wherein the first current level is sufficiently small to provide a switching rate of the switching device in operation to be less than the predetermined device switching rate.
申请公布号 US9059076(B2) 申请公布日期 2015.06.16
申请号 US201414222992 申请日期 2014.03.24
申请人 Transphorm Inc. 发明人 Wu Yifeng;Zhou Liang;Wang Zhan
分类号 H03K3/00;H01L29/20;H03K17/16;H01L29/40;H01L29/778;H03K17/687;H01L29/423 主分类号 H03K3/00
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. An electronic component, comprising: a switching device comprising a source, a gate, and a drain, the switching device having a predetermined device switching rate; a gate driver electrically coupled between the source and the gate of the switching device; and a ferrite bead connected between the output of the gate driver and the gate of the switching device, the gate driver configured to switch a gate voltage of the switching device at a gate driver switching rate, the gate driver configured such that in operation, an output current of the gate driver cannot exceed a first current level; wherein the first current level is sufficiently small to provide a switching rate of the switching device in operation to be less than the predetermined device switching rate.
地址 Goleta CA US