Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density

摘要

A mechanism is provided for a spin torque transfer random access memory device. A tunnel barrier is disposed on a reference layer, and a free layer is disposed on the tunnel barrier. The free layer includes an iron layer as a top part of the free layer. A metal oxide layer is disposed on the iron layer, and a cap layer is disposed on the metal oxide layer.

主权项

1. A spin torque transfer random access memory device, comprising:
a tunnel barrier disposed on a reference layer; a free layer disposed on the tunnel barrier; wherein the free layer includes a first magnetic layer disposed on the tunnel barrier, a spacer layer disposed on the first magnetic layer, a second magnetic layer disposed on the spacer layer, and an iron layer disposed on the second magnetic layer; a metal oxide layer disposed on the iron layer; and a cap layer disposed on the iron layer.