发明名称 |
MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF CONTROLLING READ VOLTAGE OF THE MEMORY DEVICE. |
摘要 |
A memory device includes a memory cell array having a plurality of memory cells, and a page buffer unit including a plurality of page buffers configured to store a plurality of pieces of data sequentially read from some of the plurality of memory cells at different read voltage levels, respectively, and to perform a logic operation on the plurality of pieces of data, respectively. The memory device further includes a counting unit configured to count the number of memory cells that exist in each of a plurality of sections defined by the different read voltage levels, based on results of the logic operation |
申请公布号 |
NL2011135(C) |
申请公布日期 |
2015.06.16 |
申请号 |
NL20132011135 |
申请日期 |
2013.07.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
MYUNG-HOON CHOI;JAE-YONG JEONG;PARK KI-TAE |
分类号 |
G11C11/56;G11C16/26;G11C16/34;G11C29/02 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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