Polishing pad, composition for the manufacture thereof, and method of making and using

摘要

A polyurethane layer for forming a polishing pad for a semiconductor wafer is described, wherein the polyurethane layer comprises: a foamed polyurethane, wherein the polyurethane foam has a density of about 640 to about 960 kg/m3, and a plurality of cells having an average diameter of about 20 to about 200 micrometers; and particles of a hydrophobic polymer having a critical surface energy of less than 35 mN/m and having a median particle size of 3 to 100 micrometers. Polishing pads as well as methods for polishing are also described.

主权项

1. A polyurethane layer, comprising:
a polyurethane foam, wherein the polyurethane foam has
a density of about 640 to about 1200 kg/m3, anda plurality of cells having an average diameter of about 20 to about 200 micrometers; andparticles of a hydrophobic polymer having a critical surface energy of less than 35 mN/m, having a median particle size of 3 to 100 micrometers and present in an amount of 0.1 to 5 wt. % of the polyurethane layer;wherein the polyurethane layer is capable of use in forming a polishing layer of a polishing pad to planarize a workpiece in conjunction with a chemical-mechanical polishing apparatus.