Semiconductor device

摘要

In one embodiment, a semiconductor device includes first and second semiconductor layers of a first conductivity type above a substrate via a first film, a first electrode above the second semiconductor layer, and a second electrode disposed on a side of the first electrode or an opposite side of the first electrode with respect to the second semiconductor layer. The device further includes a first pad layer connected to the first electrode, a second pad layer connected to the second electrode and including a first upper portion contacting the second electrode, a second upper portion disposed at a level between upper and lower portions of the substrate, and a third upper portion opposed to the lower portion of the substrate, and a third semiconductor layer of a second conductivity type between the second upper portion of the second pad layer and a lower portion of the first film.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a first film disposed above the semiconductor substrate; a first semiconductor layer of a first conductivity type or an intrinsic type disposed above the first film; a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer; a first main electrode disposed above the second semiconductor layer; a second main electrode disposed above the second semiconductor layer and on a side of the first main electrode with respect to the second semiconductor layer; a control electrode disposed above the second semiconductor layer via an insulator in between the first and second main electrodes; a first pad layer electrically connected to the first main electrode; a second pad layer electrically connected to the second main electrode, and including a first upper portion in contact with the second main electrode, a second upper portion disposed at a level between an upper portion of the semiconductor substrate and a lower portion of the semiconductor substrate, and a third upper portion opposed to the lower portion of the semiconductor substrate via an insulating layer; a third semiconductor layer of a second conductivity type disposed between the second upper portion of the second pad layer and a lower portion of the first film; wherein the first pad layer includes a first pad portion having a shape which is overlapped with the first main electrode in a direction perpendicular to the upper and lower portions of the semiconductor substrate, and is not overlapped with the second main electrode and the control electrode in the direction perpendicular to the upper and lower portions of the semiconductor substrate.