| 摘要 |
The present invention relates to a light emitting device and a lighting device having the same. According to an embodiment, the light emitting device comprises: a first semiconductor layer including a first pit having a first depth from an upper surface, and a second pit having a depth smaller than the first depth of the first pit and connected to the first pit; a second semiconductor layer arranged on the first semiconductor layer; an active layer arranged on the second semiconductor layer; and a third semiconductor layer arranged on the active layer. The second semiconductor layer comprise an AlGaN-based first nitride layer, and a second nitride layer having other semiconductors which are different from the first nitride layer on the first nitride layer. The density of the second pit arranged on the upper surface of the first semiconductor layer is higher than the density of the second pit arranged on an upper surface of the second semiconductor layer. The first pit has the same density with the density of the first pit at the upper surface of the first semiconductor layer on the upper surface of the second semiconductor layer. |
