MAGNETIC MEMORY DEVICE, OPERATING METHOD FOR THE SAME AND SEMICONDUCTOR SYSTEM COMPRISING THE SAME

摘要

Provided are a magnetic memory device, an operating method thereof, and a semiconductor system including the same. The magnetic memory device includes a plurality of word lines, a plurality of bit lines which intersect the word lines, a plurality of magnetic memory devices which are arranged in an intersection region of the word lines and the bit lines, and a plurality of selection transistors which are connected to the word lines. The magnetic memory devices to share one word line among the word lines share one selection transistor which is connected to the one word line among the selection transistors.