发明名称 A LIGHT EMITTING DIODE AND A MANUFACTURING METHOD THEREOF
摘要 The present invention provides a light emitting diode device and a manufacturing method thereof. The light emitting diode device includes a buffer layer which is formed on a substrate, a distributed Bragg reflector (DBR) which is formed with a multilayer structure by alternatively stacking a mask pattern including an opening region and a semiconductor film which fills the opening region of the mask pattern and is formed on the mask pattern and is formed on the buffer layer, and a light emitting structure which is formed on the DBR.
申请公布号 KR20150064496(A) 申请公布日期 2015.06.11
申请号 KR20130149294 申请日期 2013.12.03
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KIM, SUNG BOCK;BAE, SUNG BUM
分类号 H01L33/10;H01L33/12 主分类号 H01L33/10
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