发明名称 |
A LIGHT EMITTING DIODE AND A MANUFACTURING METHOD THEREOF |
摘要 |
The present invention provides a light emitting diode device and a manufacturing method thereof. The light emitting diode device includes a buffer layer which is formed on a substrate, a distributed Bragg reflector (DBR) which is formed with a multilayer structure by alternatively stacking a mask pattern including an opening region and a semiconductor film which fills the opening region of the mask pattern and is formed on the mask pattern and is formed on the buffer layer, and a light emitting structure which is formed on the DBR. |
申请公布号 |
KR20150064496(A) |
申请公布日期 |
2015.06.11 |
申请号 |
KR20130149294 |
申请日期 |
2013.12.03 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM, SUNG BOCK;BAE, SUNG BUM |
分类号 |
H01L33/10;H01L33/12 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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