发明名称 METHOD FOR FORMING SOLID ELECTROLYTIC CAPACITOR
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a solid electrolytic capacitor having a plating layer formed, by electrolytic plating, on a negative electrode layer. ! SOLUTION: A method for forming a solid electrolytic capacitor comprises the steps of: forming an intermediate body 5 including a capacitor device 10; and forming a plating layer 80. The capacitor device 10 has: a positive electrode body 20; a dielectric layer 40 formed on the positive electrode body 20; a negative electrode layer 60 formed on the dielectric layer 40; and a positive electrode lead wire 30 extending from the positive electrode body 20. In the step of forming the plating layer 80, with the intermediate body 5 being immersed in a plating solution 82, and then, a voltage is applied between the plating solution 82 and the positive electrode lead wire 30 so that the potential of the plating solution 82 becomes higher than that of the positive electrode lead wire 30, whereby the plating layer 80 is formed on the negative ele
申请公布号 JP2015109329(A) 申请公布日期 2015.06.11
申请号 JP20130250970 申请日期 2013.12.04
申请人 NEC TOKIN CORP ; KEMET ELECTRONICS CORP 发明人 ARAKI KENJI ; MUKONO SETSU ; MIHARA TAKASHI ; SAIKI YOSHIHIKO
分类号 H01G9/00;H01G9/012;H01G9/028;H01G9/04 主分类号 H01G9/00
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