SYMMETRIC RF RETURN PATH LINER

摘要

An apparatus and system for plasma processing a substrate using RF power includes a chamber (100) having walls for housing an electrostatic chuck (ESC) (227) and a top electrode (210). The top electrode is oriented opposite the ESC to define a processing region. An inner liner (200) with a tubular shaped wall (200a) is defined within and is spaced apart from the walls of the chamber and is oriented to surround the processing region. The tubular shaped wall extends a height between a top and a bottom. The tubular shaped wall has functional openings for substrate access and facilities access and dummy openings oriented to define symmetry for selected ones of the functional openings. A plurality of straps (216) are connected to the bottom of the tubular shaped wall of the inner liner and are electrically coupled to a ground ring (232) within the chamber to provide an RF power return path during plasma processing.