SEMICONDUCTOR DEVICES INCLUDING WISX

摘要

Some embodiments include a semiconductor device having a stack structure including a plurality of alternating tiers of dielectric material and poly-silicon formed on a substrate. Such a semiconductor device may further include at least one opening having a high aspect ratio and extending into the stack structure to a level adjacent the substrate, a first poly-silicon channel formed in a lower portion of the opening adjacent the substrate, a second poly-silicon channel formed in an upper portion of the opening, and WSiX material disposed between the first poly-silicon channel and the second poly-silicon channel in the opening. The WSiX material is adjacent to the substrate, and can be used as an etch-landing layer and a conductive contact to contact both the first poly-silicon channel and the second poly-silicon channel in the opening. Other embodiments include methods of making semiconductor devices.

主权项

1. A method of making a semiconductor device, comprising:
forming a first stack structure over a substrate, the first stack structure including a first plurality of alternating tiers of dielectric material and conductive material; forming a first opening in the first stack structure to a level adjacent the substrate; filling the first opening with poly-silicon to form a first poly-silicon channel; removing an upper portion of the first poly-silicon channel to form a recess in the first opening; forming WSiX material in the recess and in contact with the first poly-silicon channel; forming a second stack structure over the first stack structure and the WSiX material, the second stack structure including a second plurality of alternating tiers of dielectric material and conductive material; forming a second opening in the second stack structure that exposes a portion of the WSiX material in the recess in the first opening, wherein the WSiX material controls further etching as an etch-landing material; and filling the second opening with poly-silicon to form a second poly-silicon channel in contact with the WSiX.