| 发明名称 |
Method for producing a layer of a compound semiconductor |
| 摘要 |
The invention relates to a method for producing a layer by means of MOVPE, wherein the layer comprises or consists of at least one III-V compound semiconductor and carbon, wherein the compound semiconductor comprises at least one element of main group III of the periodic table which is selected from any of gallium, aluminum, indium and/or boron, and wherein the compound semiconductor comprises at least nitrogen and wherein the compound semiconductor comprises optionally at least one further element of main group V which is selected from any of phosphorus and/or arsenic, wherein the method comprises the steps of: introducing a substrate into a vacuum chamber; evacuating the vacuum chamber to a background pressure; heating the substrate to a predefinable temperature; introducing at least one precursor gas into the vacuum chamber, said gas comprising or consisting of nitrogen; introducing at least one precursor comprising an organometallic compound into the vacuum chamber; introducing at least one hydrocarbon compound into the vacuum chamber. |
| 申请公布号 |
US2015162186(A1) |
申请公布日期 |
2015.06.11 |
| 申请号 |
US201414566146 |
申请日期 |
2014.12.10 |
| 申请人 |
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. |
发明人 |
Köhler Klaus;Müller Stefan;Breuer Steffen |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. Method for producing a layer by means of MOVPE, wherein the layer comprises or consists of at least one III-V compound semiconductor and carbon, wherein the compound semiconductor comprises at least one element of main group III of the periodic table which is selected from any of gallium, aluminum, and/or indium, andwherein the compound semiconductor comprises at least nitrogen andwherein the compound semiconductor comprises optionally at least one further element of main group V which is selected from any of phosphorus and/or arsenic,wherein the method comprises the steps of:
introducing a substrate into a vacuum chamber; evacuating the vacuum chamber to a background pressure; heating the substrate to a predefinable temperature; introducing at least one precursor gas into the vacuum chamber, said gas comprising or consisting of nitrogen; introducing at least one precursor comprising an organometallic compound into the vacuum chamber; introducing at least one hydrocarbon compound into the vacuum chamber. |
| 地址 |
Munchen DE |
