Semiconductor Device and Method of Manufacturing the Same

摘要

A plurality of semiconductor elements for power control are formed on a semiconductor substrate. A stress relaxation resin layer covering a crossing region where band-shaped dicing areas dividing the semiconductor elements adjacent to each other cross is formed. The crossing region is diced to cut the stress relaxation resin layer to obtain the separate semiconductor elements. Accordingly, even with semiconductor elements produced with a compound semiconductor substrate of SiC or the like, a semiconductor device having high adhesive strength with a sealing resin and being less likely to cause cracking or peeling of the sealing resin due to thermal stress during an operation can be obtained.

主权项

1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a plurality of semiconductor elements for power control on a semiconductor substrate; forming a resin layer covering said semiconductor substrate in a crossing region where band-shaped dicing areas dividing said semiconductor elements adjacent to each other cross; performing dicing in said crossing region to cut said resin layer; performing dicing in said dicing areas between said resin layers; interconnecting said semiconductor elements separated by dicing; and sealing said semiconductor elements as interconnected with a thermosetting resin.