Method for Integrated Circuit Fabrication

摘要

Provided is an integrated circuit (IC) fabrication method. The method includes receiving a mask, the mask having a plurality of dies and receiving a wafer, the wafer having a resist layer. The method further includes exposing the resist layer using the mask with a fraction radiation dose thereby forming a first plurality of images; re-positioning the mask relative to the wafer; and exposing the resist layer using the mask with another fraction radiation dose. A second plurality of images is formed, wherein a portion of the second plurality of images is superimposed over another portion of the first plurality of images.

主权项

1. A method comprising:
receiving a mask and a wafer, wherein the mask includes a plurality of units and each of the units corresponds to a pattern of an IC and the wafer includes a substrate and a first resist layer over the substrate; performing a first exposure to the resist layer using the mask; and performing a second exposure to the first resist layer using the mask, wherein a first image from the first exposure is superimposed with a second image from the second exposure, and the first and second images correspond to different ones of the units.