发明名称 Power Conversion Apparatus
摘要 An object of the present invention is to improve the cooling performance of a capacitor module used in a power conversion apparatus. The power conversion apparatus according to the present invention includes a power semiconductor module, a capacitor module, a flow path forming body that forms a flow path through which a cooling refrigerant flows . The flow path forming body includes a first flow path forming body that forms a first flow path part for cooling the power semiconductor module, and a second flow path forming body that forms a second flow path part for cooling the capacitor module. The first flow path forming body is provided on a side portion of the second follow path forming body and is integrally formed with the second flow path forming body. The second flow path forming body forms a housing space for housing the capacitor module above the second flow path part . The first flow path part is formed at a position facing the side wall that forms the housing space. The power semiconductor module is inserted into the first flow path part.
申请公布号 US2015163962(A1) 申请公布日期 2015.06.11
申请号 US201314418985 申请日期 2013.07.19
申请人 Hitachi Automotive Systems, Ltd. 发明人 Suzuki Hideyo;Kosuga Masashi
分类号 H05K7/20 主分类号 H05K7/20
代理机构 代理人
主权项 1. A power conversion apparatus comprising: a first power semiconductor module including a power semiconductor element for converting a direct current to an alternating current; a capacitor module including a capacitor element for smoothing the direct current; and a flow path forming body for forming a flow path through which a cooling refrigerant flows, wherein the flow path forming body has a first flow path forming body that forms a first flow path part for cooling the first power semiconductor module, and a second flow path forming body that forms a second flow path part for cooling the capacitor module, wherein the first flow path forming body is provided on a side portion of the second flow path forming body and is integrally formed with the second flow path forming body, wherein the second flow path forming body forms a housing space for housing the capacitor module above the second flow path part, wherein the first flow path part is formed at a position facing the side wall that forms the housing space, and wherein the first power semiconductor module is inserted into the first flow path part.
地址 Hitachinaka-shi, Ibaraki JP