发明名称 |
Power Conversion Apparatus |
摘要 |
An object of the present invention is to improve the cooling performance of a capacitor module used in a power conversion apparatus. The power conversion apparatus according to the present invention includes a power semiconductor module, a capacitor module, a flow path forming body that forms a flow path through which a cooling refrigerant flows . The flow path forming body includes a first flow path forming body that forms a first flow path part for cooling the power semiconductor module, and a second flow path forming body that forms a second flow path part for cooling the capacitor module. The first flow path forming body is provided on a side portion of the second follow path forming body and is integrally formed with the second flow path forming body. The second flow path forming body forms a housing space for housing the capacitor module above the second flow path part . The first flow path part is formed at a position facing the side wall that forms the housing space. The power semiconductor module is inserted into the first flow path part. |
申请公布号 |
US2015163962(A1) |
申请公布日期 |
2015.06.11 |
申请号 |
US201314418985 |
申请日期 |
2013.07.19 |
申请人 |
Hitachi Automotive Systems, Ltd. |
发明人 |
Suzuki Hideyo;Kosuga Masashi |
分类号 |
H05K7/20 |
主分类号 |
H05K7/20 |
代理机构 |
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代理人 |
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主权项 |
1. A power conversion apparatus comprising:
a first power semiconductor module including a power semiconductor element for converting a direct current to an alternating current; a capacitor module including a capacitor element for smoothing the direct current; and a flow path forming body for forming a flow path through which a cooling refrigerant flows, wherein the flow path forming body has a first flow path forming body that forms a first flow path part for cooling the first power semiconductor module, and a second flow path forming body that forms a second flow path part for cooling the capacitor module, wherein the first flow path forming body is provided on a side portion of the second flow path forming body and is integrally formed with the second flow path forming body, wherein the second flow path forming body forms a housing space for housing the capacitor module above the second flow path part, wherein the first flow path part is formed at a position facing the side wall that forms the housing space, and wherein the first power semiconductor module is inserted into the first flow path part. |
地址 |
Hitachinaka-shi, Ibaraki JP |