| 摘要 |
<p>A method for laser processing of silicon includes a step of locating a Kerr material to be encased with a silicon material forming an interface between the same. A laser beam having at least one subpulse in a burst envelope operated in a first wavelength is applied. The laser beam enters a dispersion lens focusing assembly, and passes to the Kerr material. A first wavelength is transformed into multiple second wavelengths, and some of the same is effective to process silicon. A photoacoustic compression process is generated by a laser pulse energy by some of the second wavelength transferred to silicon passing through an interface initiating Kerr effect self-focusing spread in the silicon by additional energy input to silicon, thereby generating filament in the silicon.</p> |
