| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is suitable for miniaturization.SOLUTION: A semiconductor device includes: a first transistor; a second transistor located above the first transistor; a barrier layer located between the first transistor and the second transistor; a first electrode located between the first transistor and the barrier layer; and a second electrode located between the barrier layer and the second transistor, and overlapping with the first electrode with the barrier layer interposed therebetween. A gate electrode of the first transistor, the first electrode, and one of a source electrode and a drain electrode of the second transistor are electrically connected to one another. A channel of the first transistor is formed in a first semiconductor layer including a single crystal semiconductor, and a channel of the second transistor is formed in a second semiconductor layer including an oxide semiconductor. |
