| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an infrared detector capable of obtaining a high absorption coefficient, and a method for manufacturing the same. <P>SOLUTION: The infrared detector comprises a first contact layer, a compound semiconductor layer 1 formed above the first contact layer, quantum dots 2 formed on the compound semiconductor layer 1, a barrier layer 3 for embedding the quantum dots 2 therein, and a second contact layer formed above the barrier layer 3. The compound semiconductor layer 1 has first composition parts 1a and second composition parts 1b which are different in composition from each other. The first composition parts 1a and the second composition parts 1b are both in contact with lower surfaces of the quantum dots 2 and are arranged at intervals smaller than the diameter of the quantum dots 2 in a plan view. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
