发明名称 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus and method that can correct dimensional variation more simply. <P>SOLUTION: A lithography apparatus 100 has a width dimension calculator 62 for calculating a line width dimension of a graphic constituting a pattern with respect to a correction direction represented by graphic data defining a coordinate, x,y-direction sizes and the correction direction every graphic, a pattern density calculator 60 for calculating the pattern density of a mesh region in which the graphic is disposed, a dose correction coefficient calculator 64 for calculating a dose correction coefficient to correct the width dimension by using the line width dimension and the pattern density as parameters, an irradiation amount corrector 70 for calculating a second irradiation amount by multiplying a first irradiation amount for drawing a graphic by the correction coefficient, and a drawing unit 150 for drawing a graphic on a sample with the second irradiation amount. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5731257(B2) 申请公布日期 2015.06.10
申请号 JP20110077810 申请日期 2011.03.31
申请人 发明人
分类号 H01L21/027;G03F7/20;H01J37/305 主分类号 H01L21/027
代理机构 代理人
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