| 摘要 |
820,350. Semi-conductor rectifiers. STANDARD TELEPHONES & CABLES Ltd. Aug. 23, 1957, No. 26698/57. Class 37. In a method of manufacturing a crystal rectifier, a wafer 8 of n-type silicon is centrally positioned on a base electrode disc 6 of goldplated nickel-iron alloy with a gold-antimony pellet 7 therebetween, a wire 9 of aluminium is placed perpendicularly on the free face of the wafer, and the whole, mounted in a jig (not shown), is heated to 700‹ C. in an atmosphere of hydrogen to alloy the wafer to the base electrode and the aluminium wire, to form ohmic and rectifying contacts respectively. A solder disc 5 is dropped on to the flat interior end-wall 2 of a tubular metal case 1; the preformed diode is placed in the case so that the base electrode rests on the solder disc; a helical spring 10 is inserted into the case to rest on the base electrode; a solder washer 11 is placed adjacent the metal flange 12 of a glass-metal seal 13, which is then placed in the open end of the case to compress the spring, the aluminium wire being introduced into a metal tube 14 in the seal, and the solder washer being sandwiched between the metal flange and the rim of the case 1. The assembly is held in a jig 42 (Fig. 4) and heated to solder the base electrode to the wall of the case and the glass-metal seal to the rim of the case. When cool, a tinned copper connecting wire 15 is soldered into the tube 14; connection with the base electrode is established by a similar wire 4 soldered into a tube 3 which is integral with the end of the case. |
