发明名称 |
COPPER ELECTRODEPOSITION IN MICROELECTRONICS |
摘要 |
<p>An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.</p> |
申请公布号 |
EP1810322(A4) |
申请公布日期 |
2015.06.10 |
申请号 |
EP20050851560 |
申请日期 |
2005.11.14 |
申请人 |
ENTHONE INC. |
发明人 |
PANECCASIO, VINCENT;LIN, XUAN;FIGURA, PAUL;HURTUBISE, RICHARD |
分类号 |
H01L21/288;C25D3/38;C25D7/12;H01L21/768 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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