| 摘要 |
<p>Provided is a process for forming a metal oxide film having ohmic contact with a p-type semiconductor layer and containing In with high light transmittance and low electric resistivity by a sputtering method. While a surface to be sputtered (28) of a target (21) of a metal oxide containing In is sputtered to emit sputtered particles from the sputtered surface (28), an object (1) on which a film is to be formed is moved within one plane parallel to the sputtered surface in the state in which a foundation layer is exposed on the surface of the object (1) to cause a change from the state in which the sputtered particles are not incident on the surface of the foundation layer of the object (1) that is being moved to the state in which the sputtered particles are incident thereon, the incidence of the sputtered particles on the surface of the foundation layer is started at an incidence angle (f) of 64°-85°, the object is caused to face the sputtered surface (28) while being moved, and a thin film of the metal oxide containing In is formed on the surface of the object (1).</p> |
