| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory that can quickly achieve a generation voltage reaching a desired voltage value from the operation start time of a voltage generating circuit.SOLUTION: The semiconductor memory comprises: a voltage generation section generating an output voltage of a predetermined voltage value and supplying the output voltage to a voltage supply line; a control section controlling whether or not to cause the voltage generation section to generate the output voltage; and a fast start-up circuit. The fast start-up circuit has: a first FET that is turned into an on-state when an enable signal indicates deactivation to apply a predetermined first voltage to a first line; a second FET that is turned into the on-state when the voltage of the voltage supply line is greater than a gate threshold voltage value to apply a ground potential to the first line; a third FET that is turned into the on-state when the enable signal indicates activation to output the first voltage; and a fourth FET that is turned into an off-state while the first line is in the state of the ground potential on one hand, and is turned into the on-state when the first voltage is applied to the first line on the other hand, to whereby supply the first voltage outputted from the third FET to the voltage supply line.</p> |
