Partially isolated Fin-shaped field effect transistors

摘要

A transistor device and a method for forming a fin-shaped field effect transistor (FinFET) device, with the channel portion of the fins on buried silicon oxide, while the source and drain portions of the fins on silicon. An example method includes receiving a wafer with a silicon layer electrically isolated from a silicon substrate by a buried oxide (BOX) layer. The BOX layer is in physical contact with the silicon layer and the silicon substrate. The method further comprises implanting a well in the silicon substrate and forming vertical sources and drains over the well between dummy gates. The vertical sources and drains extend through the BOX layer, fins, and a portion of the dummy gates.

主权项

1. A fin-shaped field effect transistor (FinFET) device comprising:
a plurality of fins; a wafer, the wafer including a silicon substrate and a buried oxide (BOX) layer, the BOX layer being in physical contact with the silicon substrate; a well in the silicon substrate; and vertical sources and drains over the well between dummy gates, the vertical sources and drains extending through the BOX layer, the fins, and a portion of the dummy gates; and wherein the well is doped and positioned between substrate and the vertical sources and drains, a top surface of the well is in contact with the vertical sources and drains.