Semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.

主权项

1. A semiconductor light emitting device comprising:
a first electrode; a second electrode; a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a light emitting layer; and a first dielectric layer, the first semiconductor layer including
a first region,a second region arranged with the first region in a first direction,a third region provided between the first region and the second region,a fourth region provided between the first region and the third region, the second electrode including
a first electrode portion provided apart from the first region in a second direction crossing the first direction, anda second electrode portion provided apart from the second region in the second direction and apart from the first electrode portion in the first direction, the second semiconductor layer including
a first semiconductor part provided between the first region and the first electrode portion, anda second semiconductor part provided between the second region and the second electrode portion, and the light emitting layer including
a first light emitting part provided between the first region and the first semiconductor part, anda second light emitting part provided between the second region and the second semiconductor part, a position of the first electrode in the first direction being located between a position of the first electrode portion in the first direction and a position of the second electrode portion in the first direction, the first electrode including a first portion and a second portion,
the first portion being in contact with the third region,the second portion provided apart from the fourth region in the second direction, the second portion being connected with the first portion, the first dielectric layer including a first dielectric part provided between the second portion and the fourth region in the second direction, the first dielectric layer having a refractive index lower than a refractive index of the first semiconductor layer.