发明名称 Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof
摘要 A magnetic read transducer including a magnetoresistive sensor is described, as well as a fabrication method thereof. The magnetoresistive sensor includes a cap layer overlaying a free layer. The cap layer is situated with a first thickness to absorb boron from the free layer. The magnetoresistive sensor is annealed, and boron is diffused from the free layer and absorbed by the cap layer, improving the magnetic performance of the free layer. The cap layer thickness is then reduced to a second thickness, thereby reducing the shield-to-shield (SS) stack spacing of the magnetoresistive sensor and allowing for increased areal recording density.
申请公布号 US9053719(B2) 申请公布日期 2015.06.09
申请号 US201213691695 申请日期 2012.11.30
申请人 Western Digital (Fremont), LLC 发明人 Yang Cheng-Han;Chien Chen-Jung;Kaiser Christian;Zheng Yuankai;Leng Qunwen;Pakala Mahendra
分类号 G11B5/39;B82Y10/00 主分类号 G11B5/39
代理机构 代理人
主权项 1. A method for providing a magnetic read transducer including a magnetoresistive sensor, wherein the magnetoresistive sensor includes a cap layer overlaying a free layer, the method comprising: situating the cap layer with a first thickness to absorb boron from the free layer to the cap layer; annealing the magnetoresistive sensor; diffusing boron from the free layer and absorbing boron by the cap layer during the annealing the magnetoresistive sensor; forming the cap layer as amorphous, the amorphous cap layer including titanium boride, and situating the amorphous cap layer to at least substantially inhibit the free layer from crystallizing in an orientation other than a body center cube crystal structure with a 100 plane (bcc (100)); and reducing the cap layer thickness to a second thickness, after annealing the magnetoresistive sensor.
地址 Fremont CA US