发明名称 |
Resist composition and method for producing resist pattern |
摘要 |
A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator,;;wherein R1, A1, A13, A14, X12, R3, R4, m′ and n′ are defined in the specification. |
申请公布号 |
US9052591(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201213552281 |
申请日期 |
2012.07.18 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
Ichikawa Koji;Yasue Takahiro |
分类号 |
G03F7/039;G03F7/004;G03F7/20 |
主分类号 |
G03F7/039 |
代理机构 |
Birch, Stewart, Kolasch & Birch, LLP |
代理人 |
Birch, Stewart, Kolasch & Birch, LLP |
主权项 |
1. A resist composition comprising
a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), an acid generator, and a compound represented by the formula (II). wherein R1 represents a hydrogen atom or a methyl group; A1 represents a C1 to C6 alkanediyl group; A13 represents a C1 to C18 divalent aliphatic hydrocarbon group that optionally has one or more halogen atoms; X12 represents *—CO—O— or *—O—CO—, * represents a bond to A13; A14 represents a C1 to C17 aliphatic hydrocarbon group that optionally has one or more halogen atoms; wherein R3 and R4 in each occurrence independently represent a C1 to C12 hydrocarbon group, a C1 to C6 alkoxyl group, a C2 to C7 acyl group, a C2 to C7 acyloxy group, a C2 to C7 alkoxycarbonyl group, a nitro group or a halogen atom; m′ and n′ independently represent an integer of 0 to 4. |
地址 |
Tokyo JP |