发明名称 |
Silicon single crystal production method |
摘要 |
Silicon single crystals having suppressed deformation and dislocations and the successful omission of the tail section are produced by growing the straight-body section of the silicon single crystal under the influence of a horizontal magnetic field with a magnetic flux density at its magnetic center being ≧1000 Gauss, and ≦2000 Gauss, reducing the lifting speed of the silicon single crystal relative to the surface of the melt to 0 mm/minute, maintaining a static state until there is a decrease in the apparent weight of the silicon single crystal, then further maintaining the static state so that the entire growth front of the silicon single crystal forms a convex shape protruding in a direction opposite to the lifting direction of the silicon single crystal, and separating the silicon single crystal from the melt. |
申请公布号 |
US9051661(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201113189645 |
申请日期 |
2011.07.25 |
申请人 |
Siltronic AG |
发明人 |
Kyufu Shinichi |
分类号 |
C30B15/20;C30B15/22;C30B29/06;C30B15/28;C30B15/30;C30B30/04 |
主分类号 |
C30B15/20 |
代理机构 |
Brooks Kushman P.C. |
代理人 |
Brooks Kushman P.C. |
主权项 |
1. A method for producing a silicon single crystal by the Czochralski method, comprising the steps of:
(1) growing a straight body section of the silicon single crystal by pulling up the silicon single crystal under the influence of a horizontal magnetic field applied to a raw material melt contained in a crucible, the horizontal magnetic field having a magnetic flux density at its magnetic center of greater than or equal to 1000 Gauss, and less than or equal to 2000 Gauss; (2) reducing the pulling speed of the silicon single crystal relative to the surface of said melt to 0 mm/minute after step (1); (3) measuring the apparent weight of the silicon single crystal and maintaining a static state where the relative lifting speed of the silicon single crystal is kept at 0 mm/minute until there is a decrease in the apparent weight of the silicon single crystal, after the step (2); (4) further maintaining the static state so that the entire growth front of the silicon single crystal in contact with the melt forms a convex shape protruding in a direction opposite to the pulling direction of the silicon single crystal, after step (3); and (5) separating the silicon single crystal from said melt, after step (4). |
地址 |
Munich DE |