发明名称 |
Methods of manufacturing a phase change memory device |
摘要 |
A method of manufacturing a phase change memory device includes forming a lower electrode in a cell region of a substrate and a transistor in a peripheral circuit region of the substrate. A first insulating interlayer is formed on the substrate and covers the lower electrode and the transistor. A first contact is formed to penetrate through the first insulating interlayer to connect with the transistor. A second insulating interlayer is formed on the first insulating interlayer and the first contact. A first opening and a second opening are formed by partially removing the first and second insulating interlayers. A phase change material layer pattern is formed to partially fill the first opening. A bit line is formed to fill a remaining portion of the first opening, and a wiring is formed to fill the second opening. Accordingly, the manufacturing process may be simplified. |
申请公布号 |
US9054306(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201313904665 |
申请日期 |
2013.05.29 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Eun Seong-Ho |
分类号 |
H01L21/20;H01L45/00;H01L27/24 |
主分类号 |
H01L21/20 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A method of manufacturing a phase change memory device, comprising:
forming a lower electrode in a cell region of a substrate and a transistor in a peripheral circuit region of the substrate; forming a first insulating interlayer on the substrate, the first insulating interlayer covering the lower electrode and the transistor; forming a first contact in the peripheral circuit region, the first contact penetrating through the first insulating interlayer to make an electric connection with the transistor; forming a second insulating interlayer on the first insulating interlayer and the first contact; forming a first opening and a second opening by partially removing the first and second insulating interlayers, the first opening exposing the lower electrode and the second opening exposing the first contact; forming a phase change material layer to fill the first and second openings; partially removing the phase change material layer to form a phase change material layer pattern partially filling the first opening; and forming a bit line and a wiring, the bit line filling a remaining portion of the first opening, and the wiring filling the second opening. |
地址 |
Gyeonggi-do KR |