FinFET with metal gate stressor

摘要

A gate stressor for a fin field effect transistor (FinFET) device is provided. The gate stressor includes a floor, a first stressor sidewall, and a second stressor sidewall. The floor is formed on a first portion of a gate layer. The gate layer is disposed above a shallow trench isolation (STI) region. The first stressor sidewall formed on a second portion of the gate layer. The second portion of the gate layer is disposed on sidewalls of a fin. The second stressor sidewall formed on the third portion of the gate layer. The third portion of the gate layer is disposed on sidewalls of a structure spaced apart from the fin. The first stressor side wall and the second stressor sidewall do not exceed a height of the fin.

主权项

1. A method of forming a fin field effect transistor (FinFET) device, the method comprising:
providing a substrate having a dielectric layer formed thereon, the substrate having a first fin extending through the dielectric layer; forming a forming a gate layer over the first fin and an upper surface of the dielectric layer; forming a gate stressor layer over the gate layer along sidewalls of the first fin, an uppermost surface of the gate stressor layer being lower than an uppermost surface of the first fin; and forming a gate electrode over the gate stressor layer and the first fin.