Method of patterning a feature of a semiconductor device

摘要

A method including forming a first pattern having a first and second feature is described. A masking layer is formed over the first and second features. An opening is patterned in the masking layer. The opening can extend over at least one of the first and second features. The patterned opening is then used to form a third feature (filled trench) between the first and second features. A second pattern is then formed that includes a fourth feature and fifth feature each having an edge defined by the third feature. The first, second, fourth and fifth features may then be used to pattern an underlying layer over the semiconductor substrate.

主权项

1. A method, comprising:
forming a first pattern over a semiconductor substrate having a target layer, wherein the first pattern includes a first feature and a second feature; after forming the first pattern, forming a trench between the first and second features; filling the trench with a first material, thereby forming a filled trench; after filling the trench, forming a second pattern over the semiconductor substrate, wherein the second pattern includes a third feature and a fourth feature, wherein the filled trench abuts and interposes the third and fourth features; and removing a material comprising the first, second, third and fourth features to form a first, second, third and fourth openings and using the first, second, third and fourth openings as a masking element to pattern the target layer.