发明名称 Semiconductor device
摘要 A semiconductor device includes a semiconductor substrate, an interlayer insulation film, multiple wiring layers, a first hard film, and an electrical pad. The semiconductor substrate has a semiconductor element. The interlayer insulation film is disposed above the semiconductor substrate. The multiple wiring layers are disposed within the interlayer insulation film. The first hard film is disposed above the interlayer insulation film, and the first hard film is harder than the interlayer insulation film. The electrical pad is disposed above the first hard film, and the electrical pad is used for an external connection. The electrical pad includes a lower layer pad, the upper layer pad, and a second hard film.
申请公布号 US9053973(B2) 申请公布日期 2015.06.09
申请号 US201314140650 申请日期 2013.12.26
申请人 DENSO CORPORATION 发明人 Sawada Kouichi;Tanaka Yasushi
分类号 H01L23/48;H01L23/00;H01L23/532;H01L23/31 主分类号 H01L23/48
代理机构 Posz Law Group, PLC 代理人 Posz Law Group, PLC
主权项 1. A semiconductor device comprising: a semiconductor substrate having a semiconductor element; an interlayer insulation film disposed above the semiconductor substrate; a plurality of wiring layers disposed within the interlayer insulation film; a first hard film disposed above the interlayer insulation film, the first hard film being harder than the interlayer insulation film; and an electrical pad disposed above the first hard film and used for an external connection, wherein the electrical pad includes: a lower layer pad disposed closer to the semiconductor substrate;an upper layer pad disposed further from the semiconductor substrate; anda second hard film disposed between the lower layer pad and the upper layer pad, and wherein the second hard film has conductivity and is harder than the lower layer pad and the upper layer pad.
地址 Kariya JP