| 摘要 |
Provided is a semiconductor device controlling generation of void inside a via hole. The semiconductor device (100) includes a semiconductor substrate (12). The semiconductor substrate (12) includes a surface (12a) and a release surface (12b), and including a source electrode (20), a gate electrode (22), and a drain electrode (24) of a transistor (26) installed on the surface (12a). The source electrode (20) has an upper surface (20a) and a bottom surface (20b). An opening (12d) reaching the bottom surface (20b) is installed on the release surface (12b). A Au layer (14) are laminated on a Ni layer (16) to cover a side surface and a bottom surface of the opening (12d). A solder layer (32) is installed to bury the inside of the opening (12d), and contacts with a part of the Ni layer (16) and the Au layer (19). |
