发明名称 ION IMPLANTATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an ion implantation device and an ion implantation method applicable to a wide range.SOLUTION: A multistage quadrupole lens 900 of an ion implantation device comprises a first quadrupole lens 904 and a third quadrupole lens 908. A first bore radius R1 of the first quadrupole lens 904 may be smaller than a third bore radius R3 of the third quadrupole lens 908. The multistage quadrupole lens 900 may be provided with a second quadrupole lens 906 between the first quadrupole lens 904 and the third quadrupole lens 908. A second bore radius R2 of the second quadrupole lens 906 may fall between the first bore radius R1 of the first quadrupole lens 904 and the third bore radius R3 of the third quadrupole lens 908.
申请公布号 JP2015106518(A) 申请公布日期 2015.06.08
申请号 JP20130248915 申请日期 2013.12.02
申请人 SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO LTD 发明人 YAKIDA TAKANORI
分类号 H01J37/317;H01J37/12;H01L21/265 主分类号 H01J37/317
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