SOURCE/DRAIN CONTACTS FOR NON-PLANAR TRANSISTORS

摘要

The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.

主权项

1. A microelectronic device, comprising:
a silicon-containing non-planar transistor fin; a source/drain region in the silicon-containing non-planar fin; a source/drain contact adjacent the source/drain region, wherein the source/drain contact comprises a conductive contact material and a titanium-containing contact interface layer disposed between conductive contact material and the source/drain region; and a titanium silicide interface disposed between the source/drain region and the titanium-containing contact interface layer.