发明名称 SUBSTRATE CLEAVING UNDER CONTROLLED STRESS CONDITIONS
摘要 A thickness of material may be detached from a substrate along a cleave plane, utilizing a cleaving process controlled by a releasable constraint plate. In some embodiments this constraint plate may comprise a plate that can couple side forces (the “P-plate”) and a thin, softer compliant layer (the “S-layer”) situated between the P-plate and the substrate. In certain embodiments a porous surface within the releasable constraint plate and in contact to the substrate, allows the constraint plate to be secured to the substrate via a first pressure differential. Application of a combination of a second pressure differential within a pre-existing cleaved portion, and a linear force to a side of the releasable constraint plate bound to the substrate, generates loading that results in controlled cleaving along the cleave plane.
申请公布号 US2015155422(A1) 申请公布日期 2015.06.04
申请号 US201514618940 申请日期 2015.02.10
申请人 Silicon Genesis Corporation 发明人 HENLEY Francois;LAMM Al;CHOW Yi-Lei
分类号 H01L31/18;B26F3/00;H01L21/67 主分类号 H01L31/18
代理机构 代理人
主权项 1. An apparatus comprising: a plate constrained from moving along a first axis to experience lateral strain along an orthogonal second axis; a workpiece including a cleaved portion and a surface in communication with the plate to transmit the lateral strain; a gastight region in fluid communication with the cleaved portion; and a compressed gas source configured to apply a pressure to the gastight region during application of the lateral strain, to result in a controlled cleaving in the workpiece.
地址 San Jose CA US