发明名称 |
SUBSTRATE CLEAVING UNDER CONTROLLED STRESS CONDITIONS |
摘要 |
A thickness of material may be detached from a substrate along a cleave plane, utilizing a cleaving process controlled by a releasable constraint plate. In some embodiments this constraint plate may comprise a plate that can couple side forces (the “P-plate”) and a thin, softer compliant layer (the “S-layer”) situated between the P-plate and the substrate. In certain embodiments a porous surface within the releasable constraint plate and in contact to the substrate, allows the constraint plate to be secured to the substrate via a first pressure differential. Application of a combination of a second pressure differential within a pre-existing cleaved portion, and a linear force to a side of the releasable constraint plate bound to the substrate, generates loading that results in controlled cleaving along the cleave plane. |
申请公布号 |
US2015155422(A1) |
申请公布日期 |
2015.06.04 |
申请号 |
US201514618940 |
申请日期 |
2015.02.10 |
申请人 |
Silicon Genesis Corporation |
发明人 |
HENLEY Francois;LAMM Al;CHOW Yi-Lei |
分类号 |
H01L31/18;B26F3/00;H01L21/67 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus comprising:
a plate constrained from moving along a first axis to experience lateral strain along an orthogonal second axis; a workpiece including a cleaved portion and a surface in communication with the plate to transmit the lateral strain; a gastight region in fluid communication with the cleaved portion; and a compressed gas source configured to apply a pressure to the gastight region during application of the lateral strain, to result in a controlled cleaving in the workpiece. |
地址 |
San Jose CA US |