发明名称 CHIP MODE ISOLATION AND CROSS-TALK REDUCTION THROUGH BURIED METAL LAYERS AND THROUGH-VIAS
摘要 A method for fabricating a chip surface base includes preparing a first substrate, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias, preparing a second substrate, bonding the first and second substrates and exposing the metal fillings. A method for fabricating a chip surface base includes preparing a first and second substrate, depositing a metal on at least one of the first and second substrates, bonding the first and second substrates, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias and exposing the metal fillings. A chip surface base device includes a first substrate, a second substrate, a metal layer disposed between the first and second substrates and a plurality of vias disposed on the first substrate.
申请公布号 US2015155468(A1) 申请公布日期 2015.06.04
申请号 US201514610411 申请日期 2015.01.30
申请人 International Business Machines Corporation 发明人 Abraham David W.;Keefe George A.;Lavoie Christian;Rothwell Mary E.
分类号 H01L39/04;H01L27/18;H01L23/538 主分类号 H01L39/04
代理机构 代理人
主权项 1. A chip surface base device, comprising: a first substrate; a plurality of vias formed in the first substrate; metal fillings deposited into the plurality of vias; and a second substrate bonded with the first substrate, wherein the metal fillings are exposed.
地址 Armonk NY US
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