发明名称 |
CHIP MODE ISOLATION AND CROSS-TALK REDUCTION THROUGH BURIED METAL LAYERS AND THROUGH-VIAS |
摘要 |
A method for fabricating a chip surface base includes preparing a first substrate, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias, preparing a second substrate, bonding the first and second substrates and exposing the metal fillings. A method for fabricating a chip surface base includes preparing a first and second substrate, depositing a metal on at least one of the first and second substrates, bonding the first and second substrates, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias and exposing the metal fillings. A chip surface base device includes a first substrate, a second substrate, a metal layer disposed between the first and second substrates and a plurality of vias disposed on the first substrate. |
申请公布号 |
US2015155468(A1) |
申请公布日期 |
2015.06.04 |
申请号 |
US201514610411 |
申请日期 |
2015.01.30 |
申请人 |
International Business Machines Corporation |
发明人 |
Abraham David W.;Keefe George A.;Lavoie Christian;Rothwell Mary E. |
分类号 |
H01L39/04;H01L27/18;H01L23/538 |
主分类号 |
H01L39/04 |
代理机构 |
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代理人 |
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主权项 |
1. A chip surface base device, comprising:
a first substrate; a plurality of vias formed in the first substrate; metal fillings deposited into the plurality of vias; and a second substrate bonded with the first substrate, wherein the metal fillings are exposed. |
地址 |
Armonk NY US |