| 发明名称 |
SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRODE AND METHOD OF MAKING |
| 摘要 |
The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function meta layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode. |
| 申请公布号 |
US2015155365(A1) |
申请公布日期 |
2015.06.04 |
| 申请号 |
US201314096108 |
申请日期 |
2013.12.04 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Lee Da-Yuan;Liu Kuan-Ting;Chung Hung-Chin;Lee Hsien-Ming;Chang Weng;Jang Syun-Ming;Lo Wei-Jen |
| 分类号 |
H01L29/49;H01L29/78;H01L29/51;H01L29/66;H01L27/092 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a metal gate structure formed in an opening of an insulating layer, the metal gate structure comprising:
a gate dielectric layer;a barrier layer;a work-function metal layer between the gate dielectric layer and the barrier layer, wherein the work-function metal layer has an ordered grain orientation; anda work-function adjustment layer over the barrier layer. |
| 地址 |
Hsin-Chu TW |
