| 发明名称 |
Diamond Semiconductor System and Method |
| 摘要 |
Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K, and wherein the n-type donor atoms are introduced to the lattice through ion tracks. |
| 申请公布号 |
US2015155160(A1) |
申请公布日期 |
2015.06.04 |
| 申请号 |
US201514615311 |
申请日期 |
2015.02.05 |
| 申请人 |
Adam Khan |
发明人 |
Adam Khan |
| 分类号 |
H01L21/02;H01L29/16 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a monolithically integrated diamond semiconductor, the method including the steps of:
seeding the surface of a substrate material; forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the n-type donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K, and wherein the n-type donor atoms are introduced to the lattice through ion tracks. |
| 地址 |
San Francisco CA US |
