| 摘要 |
<p>The present invention provides an integrated device including a power electronic device and a light emitting diode. The integrated device including the power electronic device and the light emitting diode includes a substrate which includes a first opening part, an n-type semiconductor layer which is located on the substrate, the power electronic device and a light emitting device which are separately located on the n-type semiconductor layer, a current blocking layer which is located between the power electronic device and the light emitting device, and a bottom electrode which is located on the lower side of the substrate and is electrically connected to the n-type semiconductor layer through the first opening part. Therefore, a high light output is obtained by singly integrating the vertical electronic device with the vertical light emitting device in comparison with an existing horizontal single integrated device.</p> |
