| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a photoelectric conversion device which is advantageous for forming a well contact in a pixel circuit section.SOLUTION: The method for manufacturing a photoelectric conversion device includes: a pixel circuit section having a well where a photoelectric conversion element and an amplification element for generating a signal based on a charge amount generated in the photoelectric conversion element are disposed; and a peripheral circuit section including an MOS transistor. The method includes the steps of: forming a dielectric film that covers the photoelectric conversion element, the amplification element and a gate electrode of the transistor; and etching the dielectric film to form a side spacer from a residue of the dielectric film on a side face of the gate electrode while protecting with a resist a part of the dielectric film covering the photoelectric conversion element and a part of the dielectric film covering the amplification element. An opening is formed in the dielectric film in the pixel circuit section by etching; and a contact that defines a potential of the well is formed through the opening. |
