| 摘要 |
PROBLEM TO BE SOLVED: To provide a stencil mask, in a method for producing a stencil mask from an SOI substrate obtained by successively laminating a silicon thin film layer, an intermediate oxide film layer and a silicon layer, capable of radiating a pattern-shaped opening formed on the silicon thin film layer as it is, and capable of sufficiently imaging the same, and a method for producing the same. ! SOLUTION: Provided is a method for producing a stencil mask comprising: a step of forming an opening of a prescribed transfer pattern on a silicon thin film layer by dry etching to the surface of an intermediate oxide film layer; and a step of forming a notch on the oxide film layer contact part of the opening by dry etching. ! COPYRIGHT: (C)2015,JPO&INPIT |
