发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A NAND DC-DC converter includes two output terminals. Each output terminal is connected to several multi-chip packages in each of which a plurality of NAND flash memory chips are provided. Phases of voltages which are output from the output terminals are different by 180 degrees. In addition, a maximum of the output voltages are approximately one-half of a maximum of an input voltage supplied to the NAND DC-DC converter |
申请公布号 |
US2015155042(A1) |
申请公布日期 |
2015.06.04 |
申请号 |
US201414268251 |
申请日期 |
2014.05.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
EGUCHI Toyokazu |
分类号 |
G11C16/10;H01L27/115 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory device comprising:
a first semiconductor memory element group including a plurality of semiconductor memory elements; a second semiconductor memory element group including a plurality of semiconductor memory elements; and a circuit including an input terminal and first and second output terminals, wherein a first voltage output through the first output terminal is supplied to the first semiconductor memory element group, wherein a second voltage output through the second output terminal is supplied to the second semiconductor memory element group, and wherein the first and second voltages have different phases. |
地址 |
Tokyo JP |