发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A NAND DC-DC converter includes two output terminals. Each output terminal is connected to several multi-chip packages in each of which a plurality of NAND flash memory chips are provided. Phases of voltages which are output from the output terminals are different by 180 degrees. In addition, a maximum of the output voltages are approximately one-half of a maximum of an input voltage supplied to the NAND DC-DC converter
申请公布号 US2015155042(A1) 申请公布日期 2015.06.04
申请号 US201414268251 申请日期 2014.05.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 EGUCHI Toyokazu
分类号 G11C16/10;H01L27/115 主分类号 G11C16/10
代理机构 代理人
主权项 1. A semiconductor memory device comprising: a first semiconductor memory element group including a plurality of semiconductor memory elements; a second semiconductor memory element group including a plurality of semiconductor memory elements; and a circuit including an input terminal and first and second output terminals, wherein a first voltage output through the first output terminal is supplied to the first semiconductor memory element group, wherein a second voltage output through the second output terminal is supplied to the second semiconductor memory element group, and wherein the first and second voltages have different phases.
地址 Tokyo JP