SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

摘要

This semiconductor element manufacturing method involves a semiconductor layer forming step for forming, on a substrate, a semiconductor layer that contains an inorganic oxide semiconductor, a passivation film forming step for depositing an organic material passivation film covering the semiconductor layer, a firing step for firing the passivation film, and a cooling step for cooling after firing. This semiconductor element manufacturing method is characterized in that when performing cooling in the cooling step, the cooling rate from the firing temperature during firing in the firing step to 50°C below said firing temperature during firing is controlled to be substantially in the range of 0.5-5°C/minute.