发明名称 RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a resist material having such characteristics that an unexposed part and an over-exposed part are insoluble with an alkali developer but a part with a medium exposure light quantity is soluble with a developer, and thereby, resolving power can be multiplied by dividing a single line into two lines through a one-time exposure and development.SOLUTION: The resist material comprises, as a base resin, a polymeric compound having a repeating unit (a) expressed by general formula (1) and having a weight average molecular weight ranging from 1,000 to 500,000.
申请公布号 JP2015102837(A) 申请公布日期 2015.06.04
申请号 JP20130245663 申请日期 2013.11.28
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;SAGEHASHI MASAYOSHI
分类号 G03F7/039;C08F12/26;C08F20/34;C08F24/00;C08F26/12;C08F32/08;G03F7/038;H01L21/027 主分类号 G03F7/039
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